Very high epitaxial growth rate of SiC using MTS as chloride-based precursor-Reference-Cited by-同舟云学术

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

Published:2007-09 Issue:22-23 Volume:201 Page:8931-8934
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Pedersen H.,Leone S.,Henry A.,Darakchieva V.,Janzén E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference24 articles.

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