Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers-Reference-Cited by-同舟云学术

Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

Published:2016-06 Issue:2 Volume:2 Page:45-47
ISSN:2452-1779
Container-title:Modern Electronic Materials
language:en
Short-container-title:Modern Electronic Materials

Author:

Mazalov Aleksandr V.,Sabitov Damir R.,Kureshov Vladimir A.,Padalitsa Anatoliy A.,Marmalyuk Aleksandr A.,Akchurin Rauf Kh.

Publisher

Pensoft Publishers

Subject

Automotive Engineering

Reference12 articles.

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4. Thermal annealing effects on p-type Mg-doped GaN films;Nakamura;Jpn. J. Appl. Phys.,1992

5. Optimum rapid thermal activation of Mg-doped p-type GaN;Nagamori;Jpn. J. Appl. Phys.,2008

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