Thermally stimulated and leakage current analysis of neutron irriadated silicon detectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
2. Neutron Spectra of 214Am/B, 241Am/Be, 241Am/F, 242Cm/Be, 238Pu/13C and 252Cf isotopic neutron sources
3. Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions
4. Trapping center parameters in indium selenide single crystals by thermally stimulated current measurements
5. Defect production and lifetime control in electron and γ‐irradiated silicon
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1. Carrier generation in irradiated Si detectors and its impact on the electric field profile;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-08
2. Long-term Damage Induced by Hadrons in Silicon Detectors for Uses at the LHC-accelerator and in Space Missions;Physica Scripta;2003-01-01
3. Radiation Defects in Silicon due to Hadrons and Leptons, their Annealing and Influence on Detector Performance;Physica Scripta;2002-01-01
4. Silicon microstrip detectors in high luminosity application;IEEE Transactions on Nuclear Science;1998-06
5. Study of bulk damage in high resistivity silicon detectors irradiated by high dose of /sup 60/Co /spl gamma/-radiation;IEEE Transactions on Nuclear Science;1997-06
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