Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer-Reference-Cited by-同舟云学术

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

Published:1991-12 Issue:3 Volume:310 Page:671-676
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Hietanen Iiro,Lindgren Jukka,Orava Risto,Tuuva Tuure,Voutilainen Martti,Brenner Richard,Andersson Mikael,Leinonen Kari,Ronkainen Hannu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Ion-implanted silicon detectors processed on a 100 mm wafer

2. Beam test results of an ion-implanted silicon strip detector on a 100 mm wafer

3. presented at the London Conf. on Position Sensitive Detectors;Hietanen,1990

4. Beam test results from a prototype for the delphi microvertex detector

5. Symposium on Detector Research and Development for the Superconducting Super Collider;Hubbeling,1990

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