Structural aspects of the metal-insulator transition in V4O7-Reference-Cited by-同舟云学术

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Structural aspects of the metal-insulator transition in V4O7

Published:1973-03 Issue:3 Volume:6 Page:419-429
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Marezio M.,McWhan D.B.,Dernier P.D.,Remeika J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Charge Localization at Metal-Insulator Transitions inTi4O7andV4O7

2. Structural aspects of the metal-insulator transition in V4O7

3. Crystallography of

4. Electrical Properties of the V4O7Single Crystals

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of V2O3 thin films on Si(1 1 1) by molecular beam epitaxy;Results in Physics;2023-06

2. Synthesis, structural and electrochemical properties of V4O9 cathode for lithium batteries;Frontiers in Chemistry;2023-04-20

3. A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing;Nano Research;2022-08-23

4. Raman Spectroscopy of V4O7 Films;Coatings;2022-02-22

5. Effect of microplate size on the semiconductor–metal transition in VO₂ thin films;New Journal of Chemistry;2022

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