Imaging of doped Si in low and very low voltage SEM: the contrast interpretation-Reference-Cited by-同舟云学术

Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

Published:2005-05 Issue:2-3 Volume:143 Page:233-239
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Jayakody G.H.,Wells T.R.C.,El-Gomati M.M.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Two-dimensional carrier profiling

2. Practical perspective of shallow junction analysis

3. Calibrated scanning capacitance microscopy investigations on p-doped Si multilayers

4. One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling

5. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

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