Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. The Blue Laser Diode;Nakamura,1997
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
4. Shortest wavelength semiconductor laser diode
5. GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition;ECS Transactions;2013-05-02
2. Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells;Japanese Journal of Applied Physics;2006-11-08
3. Growth of p-GaN at low temperature and its properties as light emitting diodes;Acta Physica Sinica;2006
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