Effect of growth parameters on dislocation generation in InP single crystal grown by the vertical gradient freeze process
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Hirth, J. P. and Lothe, J., Theory of Dislocations. Wiley, New York, 1982
2. An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP
3. Defect states in plastically deformed n-InP
4. The theory and practice of dislocation reduction in GaAs and InP
5. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
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2. A Semianalytical Thermal Stress Model for the Czochralski Growth of Type III-V Compounds;SIAM Journal on Applied Mathematics;2006-01
3. A PERTURBATION MODEL FOR THE GROWTH OF TYPE III-V COMPOUND CRYSTALS;Differential Equations and Asymptotic Theory in Mathematical Physics;2004-10
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