An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP-Reference-Cited by-同舟云学术

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An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP

Published:1986-09-16 Issue:1 Volume:97 Page:K25-K27
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Gall P.,Kallel A.,Lauret N.,Peyrade J. P.,Brousseau B.,Mazzaschi J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Thesis, Toulouse 1985.

2. , , , and , Semi-Insulating III-V Materials, Evian 1982, Shiva Publ., Nantwich 1982 (p. 199).

3. Photoluminescence of SSD and LEC grown InP

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation reduction in sulfur- and germanium-doped indium phosphide single crystals grown by the vertical gradient freeze process: A transient finite-element study;Journal of Applied Physics;2005-02-15

2. Finite element simulation of dislocation generation in doped and undoped GaAs single crystals grown from the melt;Computational Materials Science;2004-03

3. Effect of growth parameters on dislocation generation in InP single crystal grown by the vertical gradient freeze process;Acta Materialia;1999-06

4. Point defect interaction with α- and β-dislocations in InP;Physica Status Solidi (a);1993-08-16

5. Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation;Semiconductors and Semimetals;1990

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