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III-V compound semiconductors: Growth and structures

  • Published:2016-06 Issue:2 Volume:62 Page:352-370
  • ISSN:0960-8974
  • Container-title:Progress in Crystal Growth and Characterization of Materials
  • language:en
  • Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Kuech Thomas F.

Funder

NSF through the University of Wisconsin Materials Research Science and Engineering Center

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference59 articles.

1. Thermochemical Data of Pure Substances;Barin,1993

2. Properties of Aluminium Gallium Arsenide, Institution of Engineering and Technology;Adachi,1993

3. Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP;Adachi,1992

4. A binary database for III-V compound semiconductor systems;Ansara;CALPHAD,1994

5. Properties, Processing and Applications of Indium Phosphide,2000

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