Struggle between inner atoms of ultra-thin silicon film and both its dimer surfaces
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference23 articles.
1. International Technology Roadmap for Semiconductors, 2009 edition, INTERNATIONAL ROADMAP COMMITTEE.
2. Dielectric isolation of silicon by anodic bonding
3. Epitaxial layer transfer by bond and etch back of porous Si
4. Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding*1
5. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt;physica status solidi (c);2013-11-25
2. Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials;Journal of Applied Physics;2013-03-07
3. Formation Energy of Intrinsic Point Defects in Si and Ge and Implications for Ge Crystal Growth;ECS Journal of Solid State Science and Technology;2013
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