Suppression of “volcano” morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy-Reference-Cited by-同舟云学术

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Suppression of “volcano” morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy

Published:2019-06 Issue: Volume:13 Page:102285
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Huang Chia-Yen,Liu Tsung-Yen,Huang Shih-Ming,Chang Kai-Hsiang,Tai Tsu-Ying,Kuan Chieh-Hsiung,Chang Joseph Tung-Chieh,Lin Ray-Ming,Kuo Hao-Chung

Funder

Ministry of Science and Technology

Chang Gung Memorial Hospital

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference26 articles.

1. III-Nitride ultraviolet emitters;Kneissl,2015

2. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

3. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

4. Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

5. Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

2. Performance and reliability of state-of-the-art commercial UVC light emitting diodes;Solid-State Electronics;2023-11

3. Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing;Micromachines;2023-02-17

4. Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector;Journal of Alloys and Compounds;2022-07

5. AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence;ACS Photonics;2022-04-13

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