Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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3. Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor;Ogura;IEEE J Solid-State Circ,1980
4. Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs;Bravaix;Solid-State Electron,1997
5. Deep-submicrometer large-angle-tilt implanted drain (LATID) technology;Hori;IEEE Trans Electron Dev,1992
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors;Lecture Notes in Mechanical Engineering;2019
2. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs;Solid-State Electronics;2005-09
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