Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. A new LDD structure: total overlap with polysilicon spacer (TOPS)
2. Sub-half-micrometer concave MOSFET with double LDD structure
3. Deep-submicrometer large-angle-tilt implanted drain (LATID) technology
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2. Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs;Journal of Non-Crystalline Solids;2003-07
3. Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS;Microelectronic Engineering;2001-11
4. Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs;Microelectronics Reliability;2001-09
5. Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain;Solid-State Electronics;2001-08
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