Incorporation and optical activation of erbium in strained silicon–germanium structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. 1.54-μm luminescence of erbium-implanted III–V semiconductors and silicon;Ennen;Appl Phys Lett,1983
2. Electroluminescence of erbium-doped silicon;Palm;Phys Rev B,1996
3. 1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes;Chang;J Appl Phys,1998
4. Room-temperature 1.54 μm electroluminescence from erbium-doped Si/SiGe waveguides;Neufeld;Appl Phys Lett,1998
5. Strong luminescence from erbium in Si/Si1−xGex/Si quantum well structures;Huda;Elec Lett,1997
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1. Defect production in strained p-type Si1−xGex by Er implantation;Journal of Applied Physics;2011-01
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