An improved method for determining the critical energy for interface trap generation of n-MOSFETs under Vg=Vd/2 stress mode
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
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3. The evolution of the substrate–drain junction parameters during electrical ageing for n-MOS transistor characterization;de la Bardonnie;J Phys D: Appl Phys,1998
4. Chan V-H, Kim JS, Chung JE. Parameter extraction guidelines for hot-electron reliability simulation. IEEE IRPS 1993;32–7
5. Effect of oxide field on hot-carrier-induced degradation on metal-oxide-semiconductor field-effect transistors;Choi;Appl Phys Lett,1987
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