Modeling and simulation of hot-carrier-induced device degradation in MOS circuits-Reference-Cited by-同舟云学术

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Modeling and simulation of hot-carrier-induced device degradation in MOS circuits

Published:1993-05 Issue:5 Volume:28 Page:585-595
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Leblebici Y.,Kang S.-M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/5921/00229396.pdf?arnumber=229396

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