The impact of post-polysilicon gate process on ultra-thin gate oxide integrity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon;Stoik;J Appl Phys,1997
2. Use of transient enhanced diffusion to tailor boron out-diffusion;Vuong;IEEE Trans Electron,2000
3. Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short-channel effect of transistor;Jung;IEEE Electron Dev Lett,2001
4. Optimization of implant anneals to improve transistor performance in a 0.15 μm CMOS technology;Lutze;IEEE Electron Dev Lett,2000
5. 50 nm gate-length CMOS transistor with super-halo: design, process and reliability;Yu;IEDM Tech Dig,1999
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