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The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

  • Published:2001-05 Issue:5 Volume:45 Page:655-661
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Suliman S.A.,Awadelkarim O.O.,Fonash S.J.,Dolny G.M.,Hao J.,Ridley R.S.,Knoedler C.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Power DMOS for high frequency and switching applications;Fong;IEEE Trans Electron Dev,1980

2. Blake C, Kinzer D, Wood P. Synchronous rectifier versus Schottky diodes. IEEE Appl Power Electron Conf 1994. p. 17–22

3. Very low forward drop JBS rectifiers fabricated using submicron technology;Mhrotra;IEEE Trans Electron Dev,1993

4. Ultra-low specific o-resistance UMOSFET with trench contacts for source and body regions realized by self-aligned process;Matsumoto;Electr Lett,1991

5. Comparison of ultra-low specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFETs;Syau;IEEE Trans Electron Dev,1994

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