Ultralow specific on resistance UMOSFET with trench contacts for source and body regions realised by selfaligned process
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19911025?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06
2. Failure analysis and improvement of 60V power UMOSFET;Microelectronics Reliability;2014-12
3. Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer;Solid-State Electronics;2010-07
4. Power Trench MOSFET Devices on Metal Substrates;IEEE Electron Device Letters;2008-09
5. The formation of trench-gate power MOSFETs with a SiGe channel region;Semiconductor Science and Technology;2006-05-03
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