Anodic oxidation as a low thermal budget process for passivation of SiGe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. High-performance Si/SiGe n-type modulation-doped transistors
3. Needs of Low Thermal Budget Processing in SiGe Technology
4. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
5. Oxidation studies of SiGe
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanoscale islands and color centers in porous anodic alumina on silicon fabricated by oxalic acid;Applied Surface Science;2004-05
2. Color centers vs electrolytes for Si-based porous anodic alumina;Physics Letters A;2004-04
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