Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Crabbè EF, Stork JMC, Baccarani G, Fischetti MV, Laux SE. The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors. IEDM Technical Digest, 1990. p. 463
2. Collector signal delay in the presence of velocity overshoot;Laux;IEEE Electron Dev Lett,1990
3. Does velocity overshoot reduce collector delay time in AlGaAs/GaAs HBT's;Das;IEEE Electron Dev Lett,1991
4. A better insight in the performance of silicon BJT's featuring highly non-uniform collector doping profiles;Palestri;IEEE Trans Electron Dev,2000
5. Chen D, Sangiorgi E, Pinto MR, Kan EC, Ravaioli U, Dutton RW, Analysis of spurious velocity overshoot in hydrodynamic simulations. 4th Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits – NUPAD IV, 1992. p. 109
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