Author:
Huang Kuo-Ching,Fang Yean-Kuen,Yaung Dun-Nian,Chen Chung-Hui,Hsu Yung-Lung,Ting Shyh-Fann,Lin Yvonne,Kuo Di-son,Wang Chung S.,Liang Mong-Song
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. A high efficiency flash EEPROM cell for embedded memory applications;Van Houdt;IEEE Trans Electron Dev,1993
2. Ma Y, Pang CS, Pathak J, Tsao SC, Chang CF, Yamauchi Y, Yoshimi M. A novel high density contactless flash memory array using split-gate source-side injection cell for 5 V-only applications. Symp VLSI Technol Tech Dig, 1994. p. 49
3. Gate current injection in MOSFET’s with a split-gate (virtual drain) structure;Wong;IEEE Electron Dev Lett,1993
4. Kodama N, Oyama K, Shirai H, Satioh K, Okazawa T, Hokari Y. A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory. IEDM Tech Dig, 1991. p. 303
5. Ajika N, Ohi M, Arima H, Matsukawa T, Tsubouchi N. A 5 V only 16 Mbit flash EEPROM cell with a simple stacked gate structure. IEDM Tech Dig, 1990. p. 115