A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications-Reference-Cited by-同舟云学术

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A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications

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Container-title:Proceedings of 1994 VLSI Technology Symposium
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Author:

Ma Y.,Pang C.S.,Pathak J.,Tsao S.C.,Chang C.F.,Yamauchi Y.,Yoshimi M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/1128/7723/00324383.pdf?arnumber=324383

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory;Electronics;2021-02-01

2. An effective approach to improve split-gate flash product data retention;Journal of Semiconductors;2017-10

3. Source-side injection single-polysilicon split-gate flash memory;Japanese Journal of Applied Physics;2014-02-19

4. A novel high-density embedded AND-type split gate flash memory;Japanese Journal of Applied Physics;2014-01-01

5. Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells;Solid-State Electronics;2004-07

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