Author:
Roenker K.P.,Todorova D.,Breed A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. The effects of base dopant outdiffusion and undoped SiGe spacer layers in Si/SiGe/Si heterojunction bipolar transistors;Prinz;IEEE Electron Device Lett,1991
2. Analytical modeling of current gain––Early Voltage products in Si/SiGe/Si hetrojunction bipolar transistors;Prinz;IEDM Tech Dig,1991
3. The effect of base–emitter spacers and strain-dependent densities of states in Si/SiGe/Si hetrojunction bipolar transistors;Prinz;IEDM Tech Dig,1989
4. Parasitic energy barriers in SiGe HBTs;Slotboom;IEEE Electron Device Lett,1991
5. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy;Pruijmboom;IEEE Electron Device Lett,1991
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