2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs;Journal of Semiconductors;2013-06
2. Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region;ECS Transactions;2010-10-01
3. Strained-Silicon Heterojunction Bipolar Transistor;IEEE Transactions on Electron Devices;2010-06
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