Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region
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Published:2010-10-01
Issue:6
Volume:33
Page:191-199
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Al-Sa'di Mahmoud S.,Fregonese Sébastien,Maneux Cristell,Zimmer Thomas
Abstract
A new NPN-SiGe-HBT device architecture utilizing a Si3N4 strain layer is proposed. The impact of introducing a Si3N4 strain layer in the collector region on the device's electrical properties and frequency characteristics has been studied using TCAD modeling. An approximately, 8% of improvement in fT, and 5% of improvement in fMAX have been achieved in the new NPN-SiGe-HBT device's architecture in comparison with an equivalent standard conventional NPN-SiGe-HBT device. Despite of the very small decrease in the breakdown voltage BVCEO value (1%─4%), the fT×BVCE0 product enhancement is about 6% by means of strain engineering.
Publisher
The Electrochemical Society