Analysis of body bias effect with PD-SOI for analog and RF applications-Reference-Cited by-同舟云学术

Analysis of body bias effect with PD-SOI for analog and RF applications

Published:2002-08 Issue:8 Volume:46 Page:1169-1176
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Hyeokjae,Nah Hyunchul,Lee Jong-Ho,Kang Dae-Gwan,Park Young June,Min Hong Shick

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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3. Effects of body to source bias on the analog characteristics of 0.35 μm partially depleted SOI CMOS for low-voltage/low-power mixed-mode applications;Babcock;Proc IEEE Int SOI Conf,1998

4. Device characterization of body bias effects on analog characteristics with sub-0.2 μm PD–SOI device for analog and RF applications;Lee;Proc Int Semicond Dev Res Symp (ISDRS),1999

5. Matching properties of MOS transistor;Pelgrom;IEEE Trans Electron Dev,1989

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