Partially Depleted Silicon-on-Insulator (PDSOI) MOSFETs for RF Switching Applications
Author:
Affiliation:
1. Siksha ‘O’ Anusandhan (Deemed to be University),Dept. of ECE,Bhubaneswar,India,751030
2. SouraNiloy,Kolkata,India,700008
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9811418/9811430/09811445.pdf?arnumber=9811445
Reference13 articles.
1. Floating-body effects in partially depleted SOI CMOS circuits
2. Study of Floating Body Effect in SOI Technology;vandana;International Journal of Modern Engineering Research (IJMER),2013
3. Modeling of SOI FET for RF switch applications
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