Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors-Reference-Cited by-同舟云学术

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Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors

Published:2003-01 Issue:1 Volume:47 Page:25-31
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hastas N.A,Tassis D.H,Dimitriadis C.A,Brini J,Kamarinos G

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A novel cell structure for giga-bit EPROMs and flash memories using polysilicon thin film transistors

2. A simple polysilicon TFT technology for display systems on glass

3. Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors

4. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

5. Hydrogenation of polysilicon thin-film transistor in a planar inductive H/sub 2//Ar discharge

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogenation Effects on the Hot-Carrier Endurance of Metal Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin Film Transistors;Japanese Journal of Applied Physics;2008-05-16

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