A new process to improve the performance of 850 nm wavelength GaAs VCSELs-Reference-Cited by-同舟云学术

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A new process to improve the performance of 850 nm wavelength GaAs VCSELs

Published:2002-12 Issue:12 Volume:46 Page:2287-2289
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jiang Wen-Jang,Chen Lung-Chien,Wu Meng-Chyi,Yu Hsin-Chieh,Yang Hung-Pin,Sung Chia-Pin,Chi Jim-Yong,Huang Chun-Yuan,Wu Yi-Tsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors

2. 57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs

3. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

4. Bias-free 1 Gbit/s data transmission using singlemode GaAs VCSELs at = 835 nm

5. Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in 850 nm VCSELs for High-Speed Interconnects;Photonics;2022-02-13

2. Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs;Nanoscale Research Letters;2021-11-18

3. Conformal oxide coating of carbon nanotubes;Applied Physics Letters;2008-02-04

4. Chemical interface analysis of as grown HfO2 ultrathin films on SiO2;Journal of Applied Physics;2007-02

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