Chemical interface analysis of as grown HfO2 ultrathin films on SiO2-Reference-Cited by-同舟云学术

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Chemical interface analysis of as grown HfO2 ultrathin films on SiO2

Published:2007-02 Issue:3 Volume:101 Page:034112
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maunoury C.,Dabertrand K.,Martinez E.,Saadoune M.,Lafond D.,Pierre F.,Renault O.,Lhostis S.,Bailey P.,Noakes T. C. Q.,Jalabert D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2435061

Reference38 articles.

1. Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime

2. Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing

3. X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

4. The electronic structure at the atomic scale of ultrathin gate oxides

5. High-κ gate dielectrics: Current status and materials properties considerations

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3. Comparision of in situ spectroscopic ellipsometer and ex situ x-ray photoelectron spectroscopy depth profiling analysis of HfO2/Hf/Si multilayer structure;Materials Research Express;2018-08-15

4. Bibliography;Swift Ion Beam Analysis in Nanosciences;2017-08-25

5. Low-temperature solution-based fabrication of high-k HfO2 dielectric thin films via combustion process;Journal of Sol-Gel Science and Technology;2016-10-17

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