Author:
Shang Huiling,White Marvin H,Adams Dennis A
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Silicon-on-insulator technology: materials to VLSI;Colinge,1997
2. Bryant A, Brown J, Cottrell P, Ketchen M, Ellis-Monaghan J, Nowak EJ. Low power CMOS at Vdd=4KT/q. In: Device Research Conference Digest, 2001 p. 22
3. Shang H, White MH. A novel FDSOI device design for ultra low voltage applications. In: Proceedings of the International Semiconductor Device Research Symposium, 1999
4. Chen J, Maiti B, Connelly D, Mendicino M, Huang F, Adetutu O, et al. 0.18 μm metal gate fully-depleted SOI MOSFETs for Advanced CMOS Applications. In: Symp VLSI Technol, 1999
5. Su LT, Sherony MJ, Hu H, Chung JE, Antoniadis DA. Optimization of series resistance in sub-0.2 μm SOI MOSFETs. In: International Electron Device Meeting Tech Digest, 1993, p. 723
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献