Optical properties of GaInNAs/GaAs quantum wells-Reference-Cited by-同舟云学术

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Optical properties of GaInNAs/GaAs quantum wells

Published:2003-03 Issue:3 Volume:47 Page:483-487
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mazzucato S.,Erol A.,Potter R.J.,Balkan N.,Chalker P.R.,Thomas S.,Joyce T.B.,Bullough T.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Room temperature continuous wave photopumped operation of 1.22 μm GaInNAs/GaAs single quantum well vertical cavity surface emitting laser;Larson;Elect. Lett.,1997

2. Photopumped lasing at 1.25 μm of GaInNAs–GaAs multiple quantum well vertical cavity surface emitting lasers;Larson;IEEE Photon. Tech. Lett.,1997

3. GaInNAs–GaAs long wavelength vertical cavity surface emitting laser diodes;Larson;IEEE Photon. Tech. Lett.,1998

4. Ultrafast (GaIn)(Nas)/GaAs vertical cavity surface emitting laser for 1.3 μm wavelength regime;Ellmers;Appl. Phys. Lett.,1999

5. (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range;Wagner;Appl. Phys. Lett.,2000

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0.68In0.32N0.017As/GaAs quantum wells via deformation potential and piezoelectric scatterings;Physica E: Low-dimensional Systems and Nanostructures;2021-01

2. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot;Optical Materials;2016-10

3. Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application;Thin Solid Films;2006-10

4. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1−xNx structures;Materials Science and Engineering: B;2005-11

5. Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift;IEE Proceedings - Optoelectronics;2004-10-01

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