Effect of contact geometry on 4H-SiC rectifiers with junction termination extension-Reference-Cited by-同舟云学术

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Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

Published:2003-01 Issue:1 Volume:47 Page:57-60
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nigam S,Kim J,Luo B,Ren F,Chung G.Y,Pearton S.J,Williams J.R,Shenai K,Neudeck P

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. 4H-SiC rectifiers with dual metal planar Schottky contacts

2. Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor

3. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

4. SiC power Schottky and PiN diodes

5. Current–voltage characteristics of an integrated Schottky diode

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Edge Termination Techniques for β-Ga2O3 Schottky Rectifiers;ECS Journal of Solid State Science and Technology;2019

2. Optical coupling optimization in a novel metal—semiconductor—metal ultraviolet photodetector based on semicircular Schottky electrodes;Journal of Semiconductors;2012-05

3. Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes;Microelectronic Engineering;2011-06

4. Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode;Materials Science Forum;2008-09

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