Author:
Sheu Chorng-Jye,Jang Sheng-Lyang
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Chen J, Quader K, Solomon R, Chan T, Ko P, Hu C. Hot electron gate current and degradation in p-channel SOI MOSFET’s, IEEE Int SOI Conf 1991:8
2. A new post-stress drain current model for surface-channel p-type metal-oxide-semiconductor field-effect-transistors;Liu;Jpn. J. Appl. Phys.,1998
3. A compact pre- and post-stress I–V model for submicrometer buried-channel pMOSFET’s;Chyau;IEEE Trans. Electron Dev.,1998
4. A unified analytical fully-depleted and partially-depleted SOI MOSFET model;Jang;IEEE Trans. Electron Dev.,1999
5. Simulating the competing effects of p- and n-MOSFET hot-carrier aging in CMOS circuits;Lee;IEEE Trans. Electron Dev.,1994
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