Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms
-
Published:2008-11-14
Issue:11
Volume:47
Page:8248-8252
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering