A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hot electron experiments-Reference-Cited by-同舟云学术

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A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hot electron experiments

Published:1999-09 Issue:9 Volume:43 Page:1665-1671
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nuttall K.,Taylor S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Emission probability of hot electrons into silicon dioxide;Ning;J Appl Phys,1977

2. Trap creation in silicon dioxide produced by hot electrons;DiMaria;J Appl Phys,1989

3. Hot carrier degradation in submicrometre MOSFETs: from uniform injection towards the real operating conditions;Groseneken;Semicond Sci Tech,1995

4. Effects of Oxide field during SHE injection as studied by three level charge pumping;Kivi;Microelectron J,1996

5. TMA MEDICI Version 2.0.2, 1994

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