Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
3. Lanzerotti LD, Sturm JC, Stach E, Hull R, Buyuklimanli T, Magee C. Technical digest. International Electron Device Meeting, IEEE, Piscataway, NJ, p. 249, 1996
4. Osten HJ, Lippert G, Knoll D, Barth R, Heinemann B, Rücker H, Schley P. Technical digest. International Electron Device Meeting, IEEE, Piscataway, NJ, p. 803, 1997
5. Comparison of boron diffusion in Si and strained Si1−xGexepitaxial layers
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26 articles.
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