Influence of melt convection on the interface during Czochralski crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Interface shape and crystallinity in LEC GaAs
2. LEC growth of large GaAs single crystals
3. Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals
4. Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density
5. Semi-insulating III–V materials;Tatsumi,1994
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Axisymmetric and 3D calculations of melt flow during VCz growth;Journal of Crystal Growth;2004-05
2. 3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals;International Journal of Heat and Mass Transfer;2004-01
3. Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals;Journal of Crystal Growth;2003-05
4. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz);Progress in Crystal Growth and Characterization of Materials;2001-01
5. Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz);Journal of Crystal Growth;2000-05
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