Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals-Reference-Cited by-同舟云学术

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Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals

Published:2003-05 Issue:1-3 Volume:252 Page:26-36
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yakovlev E.V.,Kalaev V.V.,Evstratov I.Yu.,Frank-Rotsch Ch.,Neubert M.,Rudolph P.,Makarov Yu.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals

2. Numerical simulation of the LEC-growth of GaAs crystals with account of high-pressure gas convection

3. 200mm GaAs crystal growth by the temperature gradient controlled LEC method

4. Some features of two commercial softwares for the modeling of bulk crystal growth processes

5. Dynamics of melt-crystal interface and coupled convection-stress predictions for Czochralski crystal growth processes

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3. High visible light photocatalytic activity of nitrogen-doped ZnO thin films deposited by HiPIMS;Surface and Coatings Technology;2017-09

4. Liquid Encapsulation and Related Technologies for the Czochralski Growth of Semiconductor Compounds;Handbook of Crystal Growth;2015

5. Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method;Journal of Crystal Growth;2008-04

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