Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors-Reference-Cited by-同舟云学术

Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors

Published:2000-07 Issue:7 Volume:44 Page:1321-1324
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bhat Gururaj A,Kwok Hoi S,Wong Man

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Low temperature poly-Si thin film transistor fabrication by metal-induced lateral crystallization;Lee;IEEE Electron Dev Lett,1996

2. Bhat GA, Jin Z, Kwok HS, Wong M. Effects of longitudinal grain boundaries on the performance of MILC-TFTs. IEEE Electron Dev Lett 1999;20(1):97–9

3. Ihn TH, Lee BI, Kim TK, Kim KH, Shin JW, Ahn PS, Jeong WC, Joo SK. Fabrication of metal-gate poly-Si TFTs by metal-induced lateral crystallization. Digest Tech Papers SID 97:188–91

4. Bhat GA, Jin Z, Kwok HS, Wong M. Effects of MIC/MILC interface on the performance of MILC-TFTs. 56th Annual Device Research Conference, 1998 Jun 22–24, p. 110–1

5. Nickel induced crystallization of amorphous silicon thin films;Jin;J Appl Phys,1998

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