Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors-Reference-Cited by-同舟云学术

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Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors

Published:2013-10 Issue: Volume:544 Page:500-503
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lai Ming-Hui,Wu YewChung Sermon,Huang Jung-Jie

Funder

Sino American Silicon Products Incorporation

NSC of the ROC

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Polysilicon TFT technology for active matrix OLED displays

2. Polycrystalline silicon obtained by metal induced crystallization using different metals

3. Nickel induced lateral crystallization behavior of amorphous silicon films

4. An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors

5. Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the series resistance in staggered amorphous thin film transistors;Microelectronics Reliability;2016-08

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