Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Band gap narrowing effect in Be-doped AlxGa1−xAs studied by photoluminescence spectroscopy

Published:2000-01 Issue:1 Volume:44 Page:37-40
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zheng H.Q,Wang H,Zhang P.H,Zeng Z,Radahakrishnan K,Yoon S.F,Ng G.I

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Commercial heterojunction bipolar transistor production by molecular beam epitaxy

2. Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

3. Band‐gap narrowing in novel III‐V semiconductors

4. Band‐gap narrowing in highly dopedn‐ andp‐type GaAs studied by photoluminescence spectroscopy

5. Control of Be diffusion in molecular beam epitaxy GaAs

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1. High contrast green luminescence from spin-coated Mo-doped β-Ga2O3 thin films;Materials Chemistry and Physics;2023-02

2. Structural, optical and electrical properties of Al–In–Sn–O (AITO) films fabricated via MOCVD technique;Journal of Alloys and Compounds;2020-08

3. Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD;RSC Advances;2014-07-02

4. Effects of incident-light-intensity-dependent band gap narrowing on barrier heights of p-doped AlxGa1−xAs/GaAs heterojunction devices;Infrared Physics & Technology;2014-03

5. First principles modeling of boron-doped carbon nanotube sensors;Physica B: Condensed Matter;2012-03

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