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InP-based complementary HBT amplifiers for use in communication systems

  • Published:1999-08 Issue:8 Volume:43 Page:1507-1512
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Sawdai Donald,Pavlidis Dimitris

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Power performance of InGaAs/InP single HBTs;Sawdai,1996

2. Bandgap engineered InP-based power double heterojunction bipolar transistors;Nguyen,1997

3. Performance optimization of PNP InAlAs/InGaAs HBTs;Sawdai,1997

4. High-speed, high-current-gain P-n-p InP/InGaAs heterojunction bipolar transistors;Lunardi;IEEE Electron Dev Lett,1993

5. Power amplification using NPN and PNP InP HBTs and application to push-pull circuits;Sawdai,1998

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