Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/2007/i=T129/a=065/pdf
Reference12 articles.
1. Compact InP-based HBT VCOs with a wide tuning range at W- and D-band
2. Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's
3. Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads
4. InP-based complementary HBT amplifiers for use in communication systems
5. Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
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1. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate;Materials;2018-06-08
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