Electrical transport at a non-ideal CrSi2-Si junction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon
2. Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range
3. Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range
4. Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range
5. On the inhomogeneity of Schottky barriers
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