Thin p/p+ epitaxial layer characterization with the pulsed MOS capacitor-Reference-Cited by-同舟云学术

Thin p/p+ epitaxial layer characterization with the pulsed MOS capacitor

Published:1999-01 Issue:1 Volume:43 Page:103-111
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Sang-Yun,Schroder Dieter K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. Novel evaluation method of silicon epitaxial layer lifetimes by photoluminescence technique

4. Evaluation of near-surface microdefects in Czochralski-Si wafers after a CMOS process by an infrared interference method

5. Kirscht F, Snegirev B, Zaumseil P, Kissinger G, Takashima K, Wildes P, Hennessy J. In: Diagnostic Techniques for Semiconductor Materials and Devices. Electrochem Soc, NJ: Pennington, 1997:60–7

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