Author:
Neudeck P.G,Huang W,Dudley M
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
3. Power ICs in the saddle
4. Eldridge, G. W., Barrett, D. L., Burk, A. A., Hobgood, H. M. Siergiej, R. R., Brandt, C. D., Tischler, M. A., Bilbro, G. L., Trew, R. J., Clark, W. H. and Gedridge, R. W. Jr., American Institute of Aeronautics and Astronautics, Washington, DC, Report No. 93-2703, 1993
5. Schaffer, W. J., Negley, G. H., Irvine, K. G. and Palmour, J. W., in Diamond, SiC, and Nitride Wide-bandgap Semiconductors, Mater. Res. Soc. Proc., Vol. 339, ed. C. H. Carter, Jr., G. Gildenblatt, S. Nakamura and R. J. Nemanich. Mater. Res. Soc., Pittsburgh, PA, 1994, pp. 595–600
Cited by
86 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献