Two-dimensional simulation for the GaAs V-groove gate MESFET's
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Computer Aided Two-dimensional Analysis of the Junction Field-effect Transistor
2. Two-dimensional analysis of substrate effects in junction f.e.t.s
3. Two-dimensional numerical analysis of stability criteria of GaAs FET's
4. V-shaped-gate GaAs m.e.s.f.e.t. for improved high-frequency performance
5. Ultra-high speed 1 [micro sign]m V-gate GaAs MESFET with cutoff frequency up to 47 GHz by 2D simulation
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